Am integrated SiGe-BiCMOS low noise transmitter chip with a frequency divider chain for 77 GHz applications

被引：2

作者：

Ghazinour, Akbar ^{[1
]}

Wennekers, Peter ^{[1
]}

Reuter, Ralf ^{[1
]}

Yi, Yin ^{[1
]}

Li, Hao ^{[1
]}

Boehm, Thomas ^{[1
]}

Jahn, Danny ^{[1
]}

机构：

[1] EMEA, TSO, RF IF Innovat Ctr, Schatzbogen 7, D-81829 Munich, Germany

来源：

2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE | 2006年

关键词：

transmitter; VCO; frequency divider; 77; GHz; SiGe-BiCMOS; 77 GHz FMCW radar system;

D O I：

10.1109/EMICC.2006.282785

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a low noise transmitter chip for a 77GRz FMCW radar system being comprised of push-pull voltage controlled oscillator with an output buffer, a frequency divider chain and a peak-to-peak detector. The measurements show an output power of approximately 11 dBm at each of the two differential 5092 loads over a wide tuning range. The measured phase noise is about -85 dBc/Hz at 100 KHz offset frequency. The circuit has been implemented in a Freescale Semiconductor 0.18 mu m SiGe-BiCMOS technology. SiGe-HBTs with a typical. p ft / fmax of 200GHz / 205GHz are used as active devices.

引用

页码：194 / +

页数：2

共 41 条

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