Van der Waals materials for HOT infrared detectors: A review

被引：0
|
作者：
Rogalski, Antoni [1 ]
机构：
[1] Mil Univ Technol, Inst Appl Phys, 2 Kaliskiego St, PL-00908 Warsaw, Poland
来源：
OPTO-ELECTRONICS REVIEW | 2022年 / 30卷 / 01期
关键词：
2D material photodetectors; transition metal dichalcogenides photodetectors; HgCdTe photodiodes; high operating temperature infrared detectors; PHOTOCONDUCTORS; PHOTODIODES; LIMITS;
D O I：
10.24425/opelre.2022.140551
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the last decade several papers have announced usefulness of two-dimensional materials for high operating temperature photodetectors covering long wavelength infrared spectral region. Transition metal dichalcogenide photodetectors, such as PdSe2/MoS2 and WS2/HfS2 heterojunctions, have been shown to achieve record detectivities at room temperature (higher than HgCdTe photodiodes). Under these circumstances, it is reasonable to consider the advantages and disadvantages of two-dimensional materials for infrared detection. This review attempts to answer the question thus posed.
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页数：12
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