Sapphire: Relation between luminescence of starting materials and luminescence of single crystals

被引：3

作者：

Mogilevsky, R. ^{[1
]}

Nedilko, S. ^{[2
]}

Sharafutdinova, L. ^{[1
]}

Burlay, S. ^{[2
]}

Sherbatskii, V. ^{[2
]}

Boyko, V. ^{[2
]}

Mittl, S. ^{[3
]}

机构：

[1] Emerging Mat Technol Inc, Lake Forest, IL 60045 USA

[2] Kyiv Natl Taras Shevchenko Univ, UA-01033 Kiev, Ukraine

[3] Insaco Inc, Quakertown, PA 18951 USA

来源：

OPTICAL MATERIALS | 2009年 / 31卷 / 12期

关键词：

Sapphire;

D O I：

10.1016/j.optmat.2008.11.023

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A relation between photoluminescence (PL) characteristics of different starting materials used for crystal growth and un-doped sapphire single crystals manufactured using various methods of crystal growth (Kyropolus, HEM, Czochralski, and EFG) was found. The crystals grown using the Verneuil starting material exhibited significant PL when any method of crystal growth was used. On the contrary, sapphire samples grown by the same technologies wherein the starting material was EMT HPDA(R) revealed very low PL (HPDA R is produced by EMT. Inc., with proprietary and patented technology.) (c) 2009 Elsevier B.V. All rights reserved.

引用

页码：1880 / 1882

页数：3

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