Computer simulation of GaAs and SOI devices using TCAD tools: An REU project

被引：0
|
作者：
Goel, A [1 ]
Bodalia, M [1 ]
Innus, M [1 ]
机构：
[1] Michigan Technol Univ, Dept Elect Engn, Houghton, MI 49931 USA
来源：
PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we have briefly described an NSF-sponsored undergraduate research site established at the Michigan Technological University and have outlined one of the undergraduate research projects whose goal was to explore the capabilities of several TCAD tools to study the structure formation and I-V characteristics of five different GaAs and SOI devices including short- and long-channel JFETs, digital GaAs E-MESFETs, HEMTs and SOI BJTs.
引用
收藏
页码：226 / 229
页数：4
相关论文
共 50 条
  • [1] Simulation of GaAs MESFET devices using TCAD tools
    Ma, H
    Goel, A
    [J]. COMPUTERS AND THEIR APPLICATIONS, 2001, : 458 - 461
  • [2] Computer simulation of crosstalk in the VLSI interconnections: An REU project
    Goel, AK
    Huynh, L
    Jesiek, B
    [J]. INTERNATIONAL SOCIETY FOR COMPUTERS AND THEIR APPLICATIONS 11TH INTERNATIONAL CONFERENCE ON COMPUTER APPLICATIONS IN INDUSTRY AND ENGINEERING, 1998, : 199 - 202
  • [3] Numerical Simulation of ISFET Structures for BioSensing Devices with TCAD Tools
    Passeri, Daniele
    Morozzi, Arianna
    Kanxheri, Keida
    Scorzoni, Andrea
    [J]. PROCEEDINGS IWBBIO 2014: INTERNATIONAL WORK-CONFERENCE ON BIOINFORMATICS AND BIOMEDICAL ENGINEERING, VOLS 1 AND 2, 2014, : 425 - 435
  • [4] Numerical simulation of ISFET structures for biosensing devices with TCAD tools
    Passeri, Daniele
    Morozzi, Arianna
    Kanxheri, Keida
    Scorzoni, Andrea
    [J]. BIOMEDICAL ENGINEERING ONLINE, 2015, 14
  • [5] Numerical simulation of ISFET structures for biosensing devices with TCAD tools
    Daniele Passeri
    Arianna Morozzi
    Keida Kanxheri
    Andrea Scorzoni
    [J]. BioMedical Engineering OnLine, 14
  • [6] Atomistic process simulation and TCAD tools for future nano-devices
    La Magna, A
    Strobel, M
    [J]. 6TH WORLD MULTICONFERENCE ON SYSTEMICS, CYBERNETICS AND INFORMATICS, VOL VI, PROCEEDINGS: INDUSTRIAL SYSTEMS AND ENGINEERING I, 2002, : 52 - 57
  • [7] Process Simulation of Trench Gate and Plate and Trench drain SOI nLDMOS with TCAD Tools
    Zhang, H. P.
    Sun, Cie L. L.
    Jiang, Cie L. F.
    Xu, L. Y.
    Lin, M.
    [J]. ICSE: 2008 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2008, : 92 - 95
  • [8] Process Simulation of Trench Gate and Plate and Trench drain SOI NLIGBT with TCAD Tools
    Zhang, H. P.
    Sun, L. L.
    Jiang, L. F.
    Ma, L. J.
    Lin, M.
    [J]. 2008 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS 2008), VOLS 1-4, 2008, : 1037 - 1040
  • [9] The Effect of Surface Texturing on GaAs Solar Cell using TCAD Tools
    Jalil, Saifuddin M.
    Abdullah, Lennie
    Ahmad, Ibrahim
    Abdullah, Huda
    [J]. ICSE: 2008 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2008, : 280 - 283
  • [10] Simulation of SOI devices and circuits using BSIM3SOI
    Sinitsky, D
    Tang, S
    Jangity, A
    Assaderaghi, F
    Shahidi, G
    Hu, CM
    [J]. IEEE ELECTRON DEVICE LETTERS, 1998, 19 (09) : 323 - 325
12345