Simulation of Low-Pressure Capacitively Coupled Plasmas Combining a Parallelized Particle-in-Cell Simulation and Direct Simulation of Monte Carlo

被引：13

作者：

Kim, Jin Seok ^{[1
]}

Hur, Min Young ^{[1
]}

Song, In Cheol ^{[1
,2
]}

Lee, Ho-Jun ^{[1
]}

Lee, Hae June ^{[1
]}

机构：

[1] Pusan Natl Univ, Dept Elect & Comp Engn, Pusan 609735, South Korea

[2] Samsung Elect Co Ltd, Mechatron & Mfg Technol Ctr, Suwon 443742, South Korea

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 2014年 / 42卷 / 12期

关键词：

Capacitively coupled plasmas (CCPs); direct simulation of Monte Carlo (DSMC); particle-in-cell (PIC); POLYCRYSTALLINE SILICON FILMS; LPCVD; NONUNIFORMITIES; DISCHARGES;

D O I：

10.1109/TPS.2014.2368145

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

A parallelized particle-in-cell (PIC) simulation and direct simulation of Monte Carlo (DSMC) are combined to simulate low-pressure discharges. A two-dimensional (2-D) PIC simulation parallelized with graphics processing units is used to examine the discharge characteristics of a capacitively coupled plasma device at pressures <10 mTorr, whereas a DSMC method is used to calculate the neutral distribution instead of a fluid model. The neutral distribution profile is transferred to the PIC simulation as the initial condition. At low gas pressures, the neutral density profile shows nonuniform properties, which also changes the simulation results of plasma uniformity. Overall, the inclusion of an accurate neutral density profile is essential for obtaining exact simulation results that are comparable with the experimental results.

引用

页码：3819 / 3824

页数：6

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