Characterization of GaN and InxGa1-xN films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures

Structural and optical studies have been performed on GaN, InGaN layers, In0.08Ga0.92N/GaN heterostructures, In0.08Ga0.92N/In0.02Ga0.98N single and multiquantum wells grown by metal organic chemical vapor deposition (MOCVD) and GaN by molecular beam epitaxy (MBE) on GaN templates by using transmission electron microscopy (TEM), X-ray diffraction (XRD), and photoluminescence (PL). The layers are found to be high quality with low defect density, on the order of 10(6) cm(-2), which are mainly related to the threading dislocations originating/ propagating from the hydride vapor phase epitaxy (HVPE) GaN template. The interface between the layers and substrate could not be detected by TEM and was therefore deemed to be of high quality. Convergent beam electron diffraction studies revealed that the polarity of the films is Ga-polarity, which is the same as that of the substrate. A dual structure with different compositions and having thicknesses of 10 and 25 nm was observed in InGaN layers grown on GaN in one of the heterostructure samples. The full width at half maximum (FWHM) of the XRD rocking curves of (0002) for heterostructures and quantum wells were found to be in the range of 15-28 arcmin for a slit width of 2 mm. PL studies on GaN layers grown by MBE and MOCVD on GaN templates are reasonably similar. The PL spectra from all the MBE and MOCVD epilayers and the substrate contain a plethora of sharp peaks related to excitonic transitions. With the presence of donor-bound exciton peaks and their associated two-electron satellites, the binding energies of two distinct shallow donors (28.8 and 32.6 meV), which are attributed to Si and O, respectively, were determined. PL measurements revealed that the FWHM of the main donor bound exciton peak increased from 0.6 to 2.9 meV but no change in peak position (3.472 eV) was observed in GaN when doping with Si (5 x 10(17) cm(-3)). However, the intensities of the yellow band and the shallow donor-acceptor pair band increased 10 times as compared to that in the undoped GaN samples. In the case of InGaN/GaN heterostructures, a similar trend was observed when compared to the doped samples. In the multiquantum well In0.08Ga0.92N/In0.02Ga0.98N heterostructures, the activation energy of the exciton emission, found to be 18 meV, was the lowest in the samples studied. The peak at 3.02 eV related to the InGaN was strongly pronounced in the In0.08Ga0.92N/In0.02Ga0.98N multiquantum well structure. In the In0.08Ga0.92N/In0.02Ga0.98N quantum well structures, the change in peak position with variation of temperature from 15 to 300 K in PL spectra is "S"-shaped. The cause for the "S" shape, i.e., a red-blue-red shift, is discussed. (C) 2003 Kluwer Academic Publishers.