Electric field mediated non-volatile tuning magnetism in CoPt/PMN-PT heterostructure for magnetoelectric memory devices

被引：8

作者：

Yang, Y. T. ^{[1
,2
,3
]}

Li, J. ^{[1
,2
,3
]}

Peng, X. L. ^{[1
]}

Wang, X. Q. ^{[1
]}

Wang, D. H. ^{[2
,3
]}

Cao, Q. Q. ^{[2
,3
]}

Du, Y. W. ^{[2
,3
]}

机构：

[1] China Jiliang Univ, Zhejiang Prov Key Lab Magnetism, Coll Mat Sci & Engn, Hangzhou 310018, Zhejiang, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[3] Nanjing Univ, Jiangsu Key Lab Nano Technol, Nanjing 210093, Jiangsu, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 07期

基金：

中国国家自然科学基金;

关键词：

MAGNETIZATION REVERSAL; ATOMIC LAYERS; ANISOTROPY; ALLOY; FILMS; MULTIFERROICS; MANIPULATION; RESISTANCE;

D O I：

10.1063/1.4942363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a power efficient non-volatile magnetoelectric memory in the CoPt/(011)PMN-PT heterostructure. Two reversible and stable electric field induced coercivity states (i.e., high-H-C or low-H-C) are obtained due to the strain mediated converse magnetoelectric effect. The reading process of the different coercive field information written by electric fields is demonstrated by using a magnetoresistance read head. This result shows good prospects in the application of novel multiferroic devices. (C) 2016 AIP Publishing LLC.

引用

页数：4

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