Extended backside-illuminated InGaAs on GaAsIR detectors

被引：5

作者：

John, J ^{[1
]}

Zimmermann, L ^{[1
]}

Merken, P ^{[1
]}

Borghs, G ^{[1
]}

Van Hoof, C ^{[1
]}

机构：

[1] Interuniv Microelect Ctr, IMEC, Louvain, Belgium

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XXV111, PTS 1 AND 2 | 2003年 / 4820卷

关键词：

extended InGaAs; SWIR; linear array; focal plane array; flip-chip bonding; back-side illumination;

D O I：

10.1117/12.450563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3" GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In0.8Ga0.2M and GaAs the diode performance allows applications in spectroscopy and imaging. Photovoltaic diode characterization measures like R(0)A product and quantum efficiency were extracted from IN curves. The layers are processed with standard photolithography and micro-structuring tools and finally flip-chip bonded on a silicon read out integrated circuit (ROIC). Linear arrays of 256 and 512 pixel with 25 mum pitch were fabricated as well as focal plane arrays (FPA) of 256 x 320 pixel with 30 mum pitch. Functionality is proven by using the assemblies in systems for spectroscopy and beam profiling up to 2.5 mum wavelength.

引用

页码：453 / 459

页数：7

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