Tunable Spin Injection in High-Quality Graphene with One-Dimensional Contacts

被引:7
|
作者
Guarochico-Moreira, Victor H. [1 ,2 ]
Sambricio, Jose L. [1 ]
Omari, Khalid [1 ]
Anderson, Christopher R. [1 ]
Bandurin, Denis A. [1 ]
Toscano-Figueroa, Jesus C. [1 ,3 ]
Natera-Cordero, Noel [1 ,3 ]
Watanabe, Kenji [4 ]
Taniguchi, Takashi [4 ]
Grigorieva, Irina, V [1 ]
Vera-Marun, Ivan J. [1 ]
机构
[1] Univ Manchester, Dept Phys & Astron, Manchester M13 9PL, Lancs, England
[2] ESPOL, Fac Ciencias Nat & Matemat, Escuela Super Politecn Litoral, Guayaquil 090902, Ecuador
[3] Consejo Nacl Ciencia & Tecnol CONACyT, Mexico City 03940, DF, Mexico
[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
基金
英国工程与自然科学研究理事会;
关键词
hBN; graphene; spin injection; 1D contacts; van der Waals devices; ELECTRONIC-PROPERTIES; TRANSPORT; PRECESSION; CURRENTS; METAL;
D O I
10.1021/acs.nanolett.1c03625
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and reducing impurities, but the influence of standard two-dimensional (2D) tunnel contacts, via pinholes and doping of the graphene channel, remains difficult to eliminate. Here, we report the observation of spin injection and tunable spin signal in fully encapsulated graphene, enabled by van der Waals heterostructures with one-dimensional (1D) contacts. This architecture prevents significant doping from the contacts, enabling high-quality graphene channels, currently with mobilities up to 130 000 cm (2) V-1 s(-1) and spin diffusion lengths approaching 20 mu m. The nanoscale-wide 1D contacts allow spin injection both at room and at low temperature, with the latter exhibiting efficiency comparable with 2D tunnel contacts. At low temperature, the spin signals can be enhanced by as much as an order of magnitude by electrostatic gating, adding new functionality.
引用
收藏
页码:935 / 941
页数:7
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