Logic Circuits With Hydrogenated Diamond Field-Effect Transistors

被引：56

作者：

Liu, Jiangwei ^{[1
]}

Ohsato, Hirotaka ^{[2
]}

Liao, Meiyong ^{[1
]}

Imura, Masataka ^{[1
]}

Watanabe, Eiichiro ^{[2
]}

Koide, Yasuo ^{[3
]}

机构：

[1] Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Mat Sci, Nanofabricat Platform, Tsukuba, Ibaraki 3050047, Japan

[3] Natl Inst Mat Sci, Res Network & Facil Serv Div, Tsukuba, Ibaraki 3050047, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 07期

关键词：

Diamond; MOSFET; logic circuits; FETS;

D O I：

10.1109/LED.2017.2702744

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As a first step to develop a diamond integrated circuit, hydrogenated diamond not and nor logic circuits composed of depletion-mode (D-mode) and enhancement-mode (E-mode) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated. The D-and E-modes MOSFETs act as load and driver devices for the logic circuits, respectively, which provides complementary transistor actions. The extrinsic transconductance maxima for both the MOSFETs are almost the same value of 17 mS mm(-1) and insensitive to device processing. With supply voltage changing from -5 to -25 V, gain maximum for not logic circuit increases from 1.2 to 26.1. The nor logic circuit shows clear nor gate characteristics.

引用

页码：922 / 925

页数：4

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