Research on the Magnetism of Yttrium Doped Zinc Oxide Film

被引：6
|
作者：
Lan, Zhihuan [1 ]
Miao, Xiujuan [1 ]
机构：
[1] Air Force Aviat Univ, Dept Campaign & Command, Changchun 130022, Peoples R China
来源：
APPLIED SCIENCE, MATERIALS SCIENCE AND INFORMATION TECHNOLOGIES IN INDUSTRY | 2014年 / 513-517卷
关键词：
Magnetism; Yttrium; Zinc Oxide; THIN-FILMS;
D O I：
10.4028/www.scientific.net/AMM.513-517.70
中图分类号：
TU [建筑科学];
学科分类号：
0813 ;
摘要：
The magnetism of Y doped ZnO film was calculated by using an accurate full-potential linerized plane-wave and supercell method. To analyzing the results, we find that: The ZnO film containing Zn vacancies is magnetic and the origin of magnetism is Zn vacancies; The Y ions in Y doped ZnO film is +3 and non-magnetic; The formation energy of Zn vacancies in the Y doped ZnO film is smaller than in the ZnO film, so Y favors the formation of V-Zn; The Y doped ZnO film containing Zn vacancies is magnetic.
引用
收藏
页码：70 / 73
页数：4
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