Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells

被引：14

作者：

Carmody, C ^{[1
]}

Tan, HH ^{[1
]}

Jagadish, C ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 08期

关键词：

Amorphization - Computer simulation - Interdiffusion (solids) - Ion implantation - Lattice constants - Metallorganic chemical vapor deposition - Photoluminescence - Rapid thermal annealing - Rutherford backscattering spectroscopy - Semiconductor quantum wells;

D O I：

10.1063/1.1555273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effect of implantation at room temperature and 200 degreesC into lattice matched InP/InGaAs quantum well structures capped with InP and InGaAs layers. P- ions of 20 keV were implanted into the cap layer at doses of 1x10(12)-1x10(14) cm(-2). The dose dependent evolution of shifts in photoluminescence energy for the InP capped sample was found to be affected by the implant temperature. Rutherford back scattering measurements show that the nature of the damage induced at different implant temperatures is responsible for this behavior. It was found that the InGaAs capped sample was less sensitive to the implant temperature than the InP capped sample. (C) 2003 American Institute of Physics.

引用

页码：4468 / 4470

页数：3

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