Leakage currents mechanism in thin films of ferroelectric Hf0.5Zr0.5O2

被引：5

作者：

Islamov, Damir R. ^{[1
,2
]}

Chernikova, A. G. ^{[3
]}

Kozodaev, M. G. ^{[3
]}

Markeev, A. M. ^{[3
]}

Perevalov, T. V. ^{[1
,2
]}

Gritsenko, V. A. ^{[1
,2
]}

Orlov, O. M. ^{[4
]}

机构：

[1] Rzhanov Inst Semicond Phys SB RAS, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

[3] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia

[4] JSC Mol Elect Res Inst, Moscow 124460, Russia

来源：

33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2017年 / 864卷

基金：

俄罗斯科学基金会;

关键词：

D O I：

10.1088/1742-6596/864/1/012002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the charge transport mechanism in ferroelectric Hf0.5Zr0.5O2 thin films. Transport properties of Hf0.5Zr0.5O2 are described by phonon-assisted tunnelling between traps. Comparison with transport properties of amorphous Hf0.5Zr0.5O2 demonstrates that the transport mechanism does not depend on the structure. The thermal and optical trap energies 1.25 eV and 2.5 eV, respectively, in Hf0.5Zr0.5O2 were determined based on comparison of experimentally measured data on transport with simulations within phonon-assisted tunnelling between traps. We found that the trap density in ferroelectric Hf0.5Zr0.5O2 is slightly less than one in amorphous Hf0.5Zr0.5O2. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2 is con firmed by ab initio simulation of electronic structure.

引用

页数：4

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