Bottom-up Fabrication and Atomic-Scale Characterization of Triply Linked, Laterally π-Extended Porphyrin Nanotapes**

被引:28
|
作者
Sun, Qiang [4 ,7 ]
Mateo, Luis M. [1 ,2 ]
Robles, Roberto [5 ,6 ]
Lorente, Nicolas [5 ]
Ruffieux, Pascal [4 ]
Bottari, Giovanni [1 ,2 ,3 ]
Torres, Tomas [1 ,2 ,3 ]
Fasel, Roman [4 ,8 ]
机构
[1] Univ Autonoma Madrid, Dept Quim Organ, Campus Cantoblanco, Madrid 28049, Spain
[2] IMDEA Nanociencia, Campus Cantoblanco, Madrid 28049, Spain
[3] Univ Autonoma Madrid, Inst Adv Res Chem Sci IAdChem, Madrid 28049, Spain
[4] Swiss Fed Labs Mat Sci & Technol, Empa, Nanotech Surfaces Lab, CH-8600 Dubendorf, Switzerland
[5] Univ Basque Country, CSIC, Ctr Fis Mat, CFM,MPC, Paseo Manuel de Lardizabal 5, Donostia San Sebastian 20018, Spain
[6] Donostia Int Phys Ctr DIPC, Donostia San Sebastian 20018, Spain
[7] Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China
[8] Univ Bern, Dept Chem & Biochem, CH-3012 Bern, Switzerland
基金
瑞士国家科学基金会; 欧盟地平线“2020”;
关键词
on-surface synthesis; open-shell; porphyrin nanotapes; scanning probe microscopy; spectroscopy; spin-split end states; ON-SURFACE SYNTHESIS; MOLECULAR WIRES; TAPES; CONDUCTANCE; ARRAYS;
D O I
10.1002/anie.202105350
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Porphyrin nanotapes (Por NTs) are promising structures for their use as molecular wires thanks to a high degree of pi-conjugation, low HOMO-LUMO gaps, and exceptional conductance. Such structures have been prepared in solution, but their on-surface synthesis remains unreported. Here, meso-meso triply fused Por NTs have been prepared through a two-step synthesis on Au(111). The diradical character of the on-surface formed building block PorA(2), a phenalenyl pi-extended Zn(II)Por, facilitates intermolecular homocoupling and allows for the formation of laterally pi-extended tapes. The structural and electronic properties of individual Por NTs are addressed, both on Au(111) and on a thin insulating NaCl layer, by high-resolution scanning probe microscopy/spectroscopy complemented by DFT calculations. These Por NTs carry one unpaired electron at each end, which leads to magnetic end states. Our study provides a versatile route towards Por NTs and the atomic-scale characterization of such tapes.
引用
收藏
页码:16208 / 16214
页数:7
相关论文
共 24 条
  • [1] Area selective deposition for bottom-up atomic-scale manufacturing
    Chen, Rong
    Gu, Eryan
    Cao, Kun
    Zhang, Jingming
    INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE, 2024, 199
  • [2] Fabrication and characterization of ordered atomic-scale structures - a step towards future atomic-scale technology
    Schneider, Wolf-Dieter
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 (03) : 933 - 937
  • [3] Bottom-Up Fabrication of a Metal-Supported Oxo-Metal Porphyrin
    Duncan, D. A.
    Deimel, P. S.
    Wiengarten, A.
    Paszkiewicz, M.
    Aguilar, P. Casado
    Acres, R. G.
    Klappenberger, F.
    Auwaerter, W.
    Seitsonen, A. P.
    Barth, J. V.
    Allegretti, F.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 123 (51): : 31011 - 31025
  • [4] Fabrication and electrical characterization of bottom-up silicon nanowire resonators
    Sansa, Marc
    San Paulo, Alvaro
    Perez-Murano, Francesc
    2012 IEEE SENSORS PROCEEDINGS, 2012, : 620 - 623
  • [5] Atomic-Scale Characterization of Extended Defects in Wurtzite GaN Heterostructures
    Chung, Jing-Yang
    Zhang, Li
    Syaranamual, Govindo J. J.
    Gradecak, Silvija
    Pennycook, Stephen J. J.
    Bosman, Michel
    ACS APPLIED NANO MATERIALS, 2023, 6 (15) : 14019 - 14028
  • [6] Fabrication and Characterization of Polystyrene Surface with Atomic-Scale Surface Roughness
    Shimizu, Katsumi
    Higuchi, Syoushi
    Kitahara, Amane
    Terauchi, Hikaru
    Takahashi, Isao
    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2012, 10 : 591 - 593
  • [7] Bottom-up device simulations: modeling electrical currents on the atomic scale
    Blom, Anders
    Stokbro, Kurt
    NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2, 2011, : 603 - 606
  • [8] Bottom-Up Fabrication of DNA-Templated Electronic Nanomaterials and Their Characterization
    Pang, Chao
    Aryal, Basu R.
    Ranasinghe, Dulashani R.
    Westover, Tyler R.
    Ehlert, Asami E. F.
    Harb, John N.
    Davis, Robert C.
    Woolley, Adam T.
    NANOMATERIALS, 2021, 11 (07)
  • [9] Interfacial bottom-up fabrication of ultrathin nanoporous films: techniques, characterization and applications
    Ishizaki-Betchaku, Yuya
    Yamamoto, Shunsuke
    Nagano, Shusaku
    Mitsuishi, Masaya
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2025, 64 (03)
  • [10] Building ferroelectric from the bottom up: The machine learning analysis of the atomic-scale ferroelectric distortions
    Ziatdinov, M.
    Nelson, C.
    Vasudevan, R. K.
    Chen, D. Y.
    Kalinin, S., V
    APPLIED PHYSICS LETTERS, 2019, 115 (05)