Epitaxial integration and properties of SrRuO3 on silicon

被引：19

作者：

Wang, Zhe ^{[1
]}

Nair, Hari P. ^{[2
]}

Correa, Gabriela C. ^{[2
]}

Jeong, Jaewoo ^{[3
]}

Lee, Kiyoung ^{[4
]}

Kim, Eun Sun ^{[5
]}

Seidner, Ariel H. ^{[2
]}

Lee, Chang Seung ^{[4
]}

Lim, Han Jin ^{[5
]}

Muller, David A. ^{[1
,6
]}

Schlom, Darrell G. ^{[2
,6
]}

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[3] Samsung Elect, New Memory Technol Lab, Semicond R&D Ctr, Milpitas, CA 95053 USA

[4] Samsung Elect, Samsung Adv Inst Technol, Platform Technol Lab, 130 Samsung Ro, Suwon 16678, Gyeonggi Do, South Korea

[5] Samsung Semicond R&D Ctr, 1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South Korea

[6] Cornell Nanoscale Sci, Kavli Inst, Ithaca, NY 14853 USA

来源：

APL MATERIALS | 2018年 / 6卷 / 08期

基金：

美国国家科学基金会;

关键词：

ITINERANT FERROMAGNET SRRUO3; PULSED-LASER DEPOSITION; MOLECULAR-BEAM EPITAXY; THIN-FILMS; ELECTRICAL-PROPERTIES; CRYSTAL-STRUCTURE; SI; OXIDE; GROWTH; HETEROSTRUCTURES;

D O I：

10.1063/1.5041940

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the integration of SrRuO3, one of the most widely used oxide electrode materials in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an SrTiO3 buffer layer. The resulting SrRuO3 film has a rocking curve full width at half maximum of 0.01 degrees, a resistivity at room temperature of 250 mu Omega cm, a residual resistivity ratio (rho(300) K/rho(4) K) of 11, and a paramagnetic-to-ferromagnetic transition temperature of similar to 160 K. These structural, electrical, and magnetic properties compare favorably to the best reported values for SrRuO3 films on silicon and rival those of epitaxial SrRuO3 films produced directly on SrTiO3 single crystals by thin film growth techniques other than molecular-beam epitaxy. These high quality SrRuO3 films with metallic conductivity on silicon are relevant to integrating multi-functional oxides with the workhorse of semiconductor technology, silicon. (C) 2018 Author(s).

引用

页数：10

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