Signatures of subband excitons in few-layer black phosphorus

被引:9
|
作者
Chaves, A. [1 ,2 ]
Sousa, G. O. [1 ]
Khaliji, K. [3 ]
da Costa, D. R. [1 ]
Farias, G. A. [1 ]
Low, Tony [3 ]
机构
[1] Univ Fed Ceara, Dept Fis, Caixa Postal 6030, BR-60455760 Fortaleza, Ceara, Brazil
[2] Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
[3] Univ Minnesota, Dept Elect & Comp Engn, 200 Union St SE,4-174 Keller Hall, Minneapolis, MN 55455 USA
关键词
MONOLAYER; SEMICONDUCTOR; MODULATION; GAP; WS2;
D O I
10.1103/PhysRevB.103.165428
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recent experimental measurements of light absorption in few-layer black phosphorus (BP) revealed a series of high and sharp peaks, interspersed by pairs of lower and broader features. Here, we propose a theoretical model for these excitonic states in few-layer BP within a continuum approach for the in-plane degrees of freedom and a tight-binding approximation that accounts for interlayer couplings. This yields excitonic transitions between different combinations of the subbands created by the coupled BP layers, which leads to a series of high and low oscillator strength excitonic states, consistent with the experimentally observed bright and dark exciton peaks, respectively. The main characteristics of such subband exciton states, as well as the possibility to control their energies and oscillator strengths via applied electric and magnetic fields, are discussed, towards a full understanding of the excitonic spectrum of few-layer BP and its tunability.
引用
收藏
页数:8
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