Three-level MOSFET inverter for low power drives

被引：0

作者：

Welchko, BA ^{[1
]}

Corrêa, MBD ^{[1
]}

Lipo, TA ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

来源：

IECON-2002: PROCEEDINGS OF THE 2002 28TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1-4 | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes operating a three-level Neutral Point Clamped (NPC) inverter using a two-level PWM method. This allows for the clamping diodes to be rated at a fraction of the main switches due to their low average current requirement. The use of a charge pump as a low cost method to obtain the isolated gate drive power supplies is extended for use with the NPC topology. Using this control method and circuits, an inverter based on high volume, low-cost, low-voltage power MOSFETs is experimentally demonstrated as a possible economic alternative to an IGBT based drive for 120 Vrms-supplied systems.

引用

页码：1267 / 1272

页数：6

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