Diffusion synthesis and electronic properties of Fe-doped ZnO

被引:8
|
作者
Ton-That, Cuong [1 ]
Foley, Matthew [1 ]
Lem, Laurent Lee Cheong [1 ]
McCredie, Geoff [1 ]
Phillips, Matthew R. [1 ]
Cowie, Bruce C. C. [2 ]
机构
[1] Univ Technol Sydney, Dept Phys & Adv Mat, Broadway, NSW 2007, Australia
[2] Australian Synchrotron, Clayton, Vic 3168, Australia
基金
澳大利亚研究理事会;
关键词
Fe-doped ZnO; Luminescence; X-ray absorption; Defects; Electronic materials; SPECTROSCOPY;
D O I
10.1016/j.matlet.2009.11.024
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Fe-doped ZnO was successfully fabricated by thermal in-diffusion of Fe into ZnO crystals. X-ray absorption near edge structure (XANES), photoemission and cathodoluminescence (CL) spectroscopy have been combined to examine the Fe diffusion and its effects on the electronic and optical properties of the crystal. Depth-resolved CL demonstrates that Fe in-diffusion occurs to at least 4 mu m depth and results in intense green luminescence, whereas the undoped crystal exhibits only the ZnO, near-band-edge emission. XANES and valence-band photoemission show that Fe is incorporated as Fe2+/(3+) ions on substitutional Zn sites. The results suggest that the variation in the CL properties is due to a change in the oxygen vacancy charge state as a result of electron transfer from Fe. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:386 / 388
页数:3
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