Merged CCD/SOI-CMOS technology

被引：1
|
作者：
Suntharalingam, V [1 ]
Burke, BE [1 ]
Burns, JA [1 ]
Cooper, MJ [1 ]
Keast, CL [1 ]
机构：
[1] MIT, Lincoln Lab, Lexington, MA 02420 USA
来源：
SENSORS AND CAMERA SYSTEMS FOR SCIENTIFIC, INDUSTRIAL AND DIGITAL PHOTOGRAPHY APPLICATIONS | 2000年 / 3965卷
关键词：
CCD; CMOS; SOI; low-voltage;
D O I：
10.1117/12.385466
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper we describe a new technology which fabricates CCDs and fully depleted silicon on insulator (FDSOI) CMOS circuits on the same 150-mm silicon wafer. We present results from 7.5x7.5-mu m(2) and 15x15-mu m(2)-pixel imagers that are 512x512 frame transfer devices. The 7.5-mu m-pixel device exhibits a charge handling capacity in excess of 100,000 electrons at 3.3 V and the 15-mu m-pixel device exhibits a charge-transfer efficiency over 99.998%. In addition, we demonstrate functional SOI CMOS ring oscillators with delay of 47 ps/stage at 3.3 V and 68 ps/stage at 2 V.
引用
收藏
页码：246 / 253
页数：8
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