Submonolayer structure of an abrupt Al/GaAs{001}-(2x4) interface

被引：6
|
作者：
Burnham, JS
Sanders, DE
Xu, C
Braun, RM
Goss, SH
Caffey, KP
Garrison, BJ
Winograd, N
机构：
[1] Department of Chemistry, Pennsylvania State University, 152 Davey Laboratory, University Park
来源：
PHYSICAL REVIEW B | 1996年 / 53卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.53.9901
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structure of As-terminated Al/GaAs{001}-(2 x 4) has been determined in atomic detail using angle-resolved secondary-ion-mass spectrometry. We find an abrupt interface is formed at room temperature by deposition of 0.3 ML of Al onto GaAs{001}-(2 x 4) prepared in situ by molecular-beam epitaxy. The Al atoms are found to adsorb in the troughs between two As-2 dimers, in ordered sites 0.79 +/- 0.10 Angstrom above the surface plane. These dimers maintain their 2.73-Angstrom spacing after Al deposition. The structure is determined from angular distributions of Al+ and Ga+ ions desorbed by keV ions and computer simulations of the ion-bombardment event.
引用
收藏
页码：9901 / 9906
页数：6
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