Problems of and Solutions for Coating Techniques for TEM Sample Preparation on Ultra Low-k Dielectric Devices after Progressive-FIB Cross-section Analysis

被引：0

作者：

Pan, Yanlin ^{[1
]}

Zhao, Yuzhe ^{[1
]}

Tan, Pik Kee ^{[1
]}

Mai, Zhihong ^{[1
]}

Rivai, Fransiscus ^{[1
]}

Lam, Jeffrey ^{[1
]}

机构：

[1] GLOBALFOUNDRIES Singapore Pte Ltd, 60 Woodlands Ind Pk D St 2, Singapore 738406, Singapore

来源：

2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2018年

关键词：

Ultra low-k; E-beam damage; Coating; FIB; TEM;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the impact of coating techniques for TEM sample preparation on ultra low-k dielectric devices after progressive-FIB cross-section analysis. The ultra low-k materials used as inter-metal dielectrics (IMD) has a k value less than 2.6. In the experimental study on three commonly used protective coatings (sputtered Pt, e-beam deposited insulator and PECVD oxide) for the 28 nm technology node with ultra low-k IMD, PECVD oxide coating was found to be an ideal choice for the TEM sample preparation with the least low-k dielectric deformation or damage. In-situ e-beam deposited insulator in a dual-beam FIB tool equipped with a GIS for insulator deposition is a convenient and commonly used method. However, the e-beam can introduce a considerable damage to the ultra low-k IMD during the e-beam deposition. Sputtered Pt can achieve a damage-free profile of an ultra low-k IMD, but we have to sacrifice certain portion of the target area in the final FIB cleaning process during TEM sample preparation. This makes sputtered Pt not suitable for the TEM sample preparation on a defect with a small size (< 100 nm).

引用

页数：5