ZnGeAs2 THIN FILMS PROPERTIES: A POTENTIALLY USEFUL SEMICONDUCTOR FOR PHOTOVOLTAIC APPLICATIONS

被引：0
|
作者：
Peshek, T. J. [1 ]
Tang, Z. [1 ]
Zhang, L. [1 ]
Singh, R. K. [1 ]
To, B. [2 ]
Gessert, T. A. [2 ]
Coutts, T. J. [2 ]
Newman, N. [1 ]
van Schilfgaarde, M. [1 ]
机构：
[1] Arizona State Univ, Sch Mat, Tempe, AZ 85287 USA
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3 | 2009年
关键词：
EPITAXIAL-GROWTH;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
We have studied the chalcopyrite compound ZnGeAs2 to access its potential as a novel photovoltaic material. Thin films of ZnGeAs2 have been produced by pulsed laser depositionThe films are deposited at 315 degrees C and are amorphous. They crystallize above 450 degrees C and improve in crystallinity up to and including 600 degrees C. At that temperature the Hall mobility is 55 +/- 2 cm(2)/Vs which is within uncertainty to the highest mobility ever reported for this material. We find a rather high carrier concentration, of order 10(18) - 10(19) for the annealed films, presumably due to the presence of Zn vacancies. The material is an effective light absorber, with an absorption coefficient of order 10(4) 1/cm at 1.2 eV. These properties suggest ZnGeAs2 may be used to produce cost effective and efficient solar cells.
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页码：1381 / +
页数：2
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