Surface reactions of monoethylgermane on Si(100)-(2x1)

The adsorption and decomposition of monoethylgermane (GeH3Et) on the Si(100)-(2 x 1) surface was investigated with the intent of elucidating the surface processes leading to the deposition of germanium. The low-temperature adsorption of the molecule was explored, as well as its thermal decomposition. H-2 and C2H4 are observed as the desorption products in temperature-programmed desorption experiments. The ethylene is produced bq a hydride elimination reaction within the adsorbed ethyl groups. The amount of Ge which can be deposited in a reaction cycle is correlated with the number of sires occupied by the ethyl groups upon the dissociation of GeH3Et. (C) 1998 Elsevier Science B.V.