Properties of self-assembled Ga-polar and N-polar GaN/AlN quantum dots

被引：2
|
作者：
Gogneau, N [1 ]
Monroy, E [1 ]
Fossard, F [1 ]
Gayral, B [1 ]
Monnoye, S [1 ]
Mank, H [1 ]
Daudin, B [1 ]
机构：
[1] CEA, Equipe Mixte CEA CNRS UJF, Dept Rech Fondamentale Mat Condensee, SP2M, F-38054 Grenoble 9, France
来源：
5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS | 2004年
关键词：
D O I：
10.1002/pssc.200405011
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The control of the Ga self-surfactant effect during the growth of Ga- and N-polar GaN has made possible to synthesize GaN/AIN quantum dots both with metal- and N- polarity. We show that the GaN island density can be controlled over about one order of magnitude for both polarities. Ga- and N-polar GaN/AIN QD superlattices present intense luminescence that red shifts for increasing number of periods. This behaviour is attributed to a piezo-electric variation resulting from the evolution of the strain state in the System.
引用
收藏
页码：2504 / 2507
页数：4
相关论文
共 50 条
  • [1] Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures
    Mazumder, B.
    Wong, M. H.
    Hurni, C. A.
    Zhang, J. Y.
    Mishra, U. K.
    Speck, J. S.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (09)
  • [2] Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes
    Wang, Yu-Lin
    Chu, B. H.
    Chang, C. Y.
    Chen, K. H.
    Zhang, Y.
    Sun, Q.
    Han, J.
    Pearton, S. J.
    Ren, F.
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2009, 142 (01): : 175 - 178
  • [3] Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures (vol 101, 091601, 2012)
    Mazumder, B.
    Wong, M. H.
    Hurni, C. A.
    Zhang, J. Y.
    Mishra, U. K.
    Speck, J. S.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (22)
  • [4] Photoelectrochemical activity on Ga-polar and N-polar GaN surfaces for energy conversion
    Lin, Yan-Gu
    Hsu, Yu-Kuei
    Basilio, Antonio M.
    Chen, Yit-Tsong
    Chen, Kuei-Hsien
    Chen, Li-Chyong
    [J]. OPTICS EXPRESS, 2014, 22 (01): : A21 - A27
  • [5] Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes
    Mirkhosravi, F.
    Rashidi, A.
    Elshafiey, A. T.
    Gallagher, J.
    Abedi, Z.
    Ahn, K.
    Lintereur, A.
    Mace, E. K.
    Scarpulla, M. A.
    Feezell, D.
    [J]. JOURNAL OF APPLIED PHYSICS, 2023, 133 (01)
  • [6] Study of Ga-Polar and N-Polar GaN-Based Green VCSELs by Simulation
    Wang, Ya-Chao
    Chen, Yan-Hui
    Zheng, Zhong-Ming
    Yang, Tao
    Mei, Yang
    Ying, Lei-Ying
    Zhang, Bao-Ping
    [J]. IEEE PHOTONICS JOURNAL, 2024, 16 (01): : 1 - 6
  • [7] Ga-Polar (In,Ga) N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency
    Feix, F.
    Flissikowski, T.
    Sabelfeld, K. K.
    Kaganer, V. M.
    Woelz, M.
    Geelhaar, L.
    Grahn, H. T.
    Brandt, O.
    [J]. PHYSICAL REVIEW APPLIED, 2017, 8 (01):
  • [8] Impact of surface treatments on high-κ dielectric integration with Ga-polar and N-polar GaN
    English, Caroline R.
    Wheeler, Virginia D.
    Garces, Nelson Y.
    Nepal, Neeraj
    Nath, Anindya
    Hite, Jennifer K.
    Mastro, Michael A.
    Eddy, Charles R., Jr.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (03):
  • [9] Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces
    Choi, Yunju
    Kim, Yangsoo
    Ahn, Kwang-Soon
    Kim, Hyunsoo
    [J]. APPLIED SURFACE SCIENCE, 2014, 317 : 1 - 5
  • [10] Superior Optoelectronic Performance of N-Polar GaN LED to Ga-Polar Counterpart in the "Green Gap" Range
    Li, Yangfeng
    Jiang, Yang
    Jia, Haiqiang
    Wang, Wenxin
    Yang, Rong
    Chen, Hong
    [J]. IEEE ACCESS, 2022, 10 : 95565 - 95570
12345