Physically Transient Resistive Switching Memory Based on Silk Protein

被引：159
|
作者：
Wang, Hong [1 ,2 ]
Zhu, Bowen [2 ]
Ma, Xiaohua [1 ]
Hao, Yue [1 ]
Chen, Xiaodong [2 ]
机构：
[1] Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China
[2] Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore
来源：
SMALL | 2016年 / 12卷 / 20期
基金：
中国国家自然科学基金; 新加坡国家研究基金会;
关键词：
THIN-FILM TRANSISTORS; NONVOLATILE MEMORY; ELECTRONIC DEVICES; FIBROIN; INTERLAYERS; FABRICATION; INJECTION; SERICIN;
D O I：
10.1002/smll.201502906
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate-buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 102 and a retention time of more than 104 s are achieved for nonvolatile memory applications. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2715 / 2719
页数：5
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