Post-deposition annealing effect on In2S3 thin films deposited using SILAR technique

被引：23
|
作者：
Ranjith, R.
John, Teny Theresa
Kartha, C. Sudha
Vijayakumar, K. P. [1 ]
Abe, T.
Kashiwaba, Y.
机构：
[1] Cochin Univ Sci & Technol, Dept Phys, Thin Film Photovolta Div, Cochin 682022, Kerala, India
[2] Iwate Univ, Dept Elect & Elect Engn, Morioka, Iwate 0208551, Japan
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2007年 / 10卷 / 01期
关键词：
SILAR; indium sulfide; sodium sulfide; indium chloride;
D O I：
10.1016/j.mssp.2006.06.001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Indium Sulfide thin films have been deposited on glass substrate using a simple and inexpensive technique viz., successive ionic layer adsorption and reaction (SILAR). The films are characterized using X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and optical absorption techniques. Samples are prepared by varying dipping and rinsing time, and those prepared at room temperature are found to be amorphous in nature. However, peaks corresponding to beta-In2S3 are observed, on annealing at 400 degrees C. Grain size is found to increase with increase in the dipping times, either in the precursor solutions or in water. Band gap decreases considerably for samples annealed at 400 degrees C in vacuum. (C) 2006 Published by Elsevier Ltd.
引用
收藏
页码：49 / 55
页数：7
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