Characterization of high quality ZnTe heteroepitaxy layers using low temperature buffer layers

High quality ZnTe heteroepitaxial layers are achieved by inserting a thin ZnTe buffer layer at low growth temperature (LT-ZnTe buffer). It has been characterized by using low temperature photoluminescence, high resolution X-ray diffraction scans, and transmission electron micrography. The ZnTe heteroepitaxy layer with a LT-buffer shows strong luminescence intensity near band emission and a narrow line width of X-ray rocking curve as narrow as 42 arcsec in (004) reflection. The dislocation density is estimated as 1.3 x 10(6) cm(-2) by multiple XRD measurements with different indices. A cross sectional view by transmission electron microscopy confirms high structural quality of a ZnTe layer grown on LT-buffers.