Determination of the electron trap level in Fe-doped GaN by phonon-assisted conduction phenomenon

被引：5

作者：

Fukuda, Hiroki ^{[1
]}

Nagakubo, Akira ^{[1
]}

Usami, Shigeyoshi ^{[1
]}

Ikeda, Masashi ^{[1
]}

Imanishi, Masayuki ^{[1
]}

Yoshimura, Masashi ^{[1
]}

Mori, Yusuke ^{[1
]}

Adachi, Kanta ^{[2
,3
]}

Ogi, Hirotsugu ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] Iwate Univ, Dept Syst Innovat Engn, 4-3-5 Ueda, Morioka, Iwate 0208551, Japan

[3] Univ Cambridge, Dept Earth Sci, Downing St, Cambridge CB2 3EQ, England

来源：

APPLIED PHYSICS EXPRESS | 2022年 / 15卷 / 07期

关键词：

ELASTIC-CONSTANTS; ALGAN/GAN HEMTS; CURRENT COLLAPSE; CRYSTALS; STRAIN;

D O I：

10.35848/1882-0786/ac749c

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We acoustically measured the energy level for thermally activated conduction (TAC) in high-resistivity Fe-doped GaN using the non-contacting antenna-transmission acoustic-resonance method. The acoustic attenuation takes a maximum at a specific temperature, where the TAC is accelerated with the help of phonon energy. The Debye-type relaxation is thus observed for acoustic attenuation, and its activation energy (0.54 +/- 0.04 eV) was determined with attenuation measurements at various frequencies and temperatures. This value agrees with the E3 level in GaN, indicating that thermally associated conduction originates from the E3 trap level. We also measured the five independent elastic constants at high temperatures. (C) 2022 The Japan Society of Applied Physics

引用

页数：5

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