Chemically amplified deep ultraviolet resist for positive tone ion exposure

被引:7
|
作者
Bruenger, WH
Torkler, M
Buchmann, LM
Finkelstein, W
机构
[1] Fraunhofer Inst Silicon Technol, D-25524 Itzehoe, Germany
[2] Adv Lithog Grp, Unit B4, Columbia, MD USA
来源
关键词
D O I
10.1116/1.589645
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The positive tone deep ultraviolet resist UV II HS-0.6 (Shipley) has been evaluated for ion exposure in the ion projector at the Fraunhofer Institute in Berlin. The chemically amplified resist showed extremely high sensitivity of 1 x 10(12) H+ ions/cm(2) at an ion energy of 75 keV. The contrast number was 11. Smallest lines with 65 nm linewidth could be delineated in 140-nm-high resist. At higher resist thickness of 370 nm, lines down to 70 nm were stable showing aspect ratios of >4. The exposure latitude at 100 nm nominal linewidth was +/-10% dose variation for a +/-10% linewidth change. (C) 1997 American Vacuum Society.
引用
收藏
页码:2355 / 2357
页数:3
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