Localized epitaxy for vertical cavity surface emitting laser applications

被引：0
|
作者：
Erdtmann, M [1 ]
Kim, S [1 ]
Razeghi, M [1 ]
机构：
[1] Northwestern Univ, Ctr Quantum Devices, Evanston, IL 60208 USA
来源：
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷
关键词：
VCSEL; Al-free; distributed Bragg reflector; localized epitaxy; misfit dislocation;
D O I：
10.4028/www.scientific.net/MSF.258-263.1637
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
VCSELs have emerged as an important device for several key applications. Nearly all VCSELs reported contain Al, which easily oxidizes and degrades the device. As of yet, very little effort has been put into Al-free VCSELs. We demonstrate an Al-free GaInP/GaAs DBR with a reflectivity of 0.989 near 0.98 mu m. We also show the benefits of localized epitaxy for the growth of mismatched epilayers, which can cut down on the effects of dislocations. These are two pieces to the puzzle of producing longer-wavelength (> 1 mu m) Al-free VCSELs on GaAs substrates.
引用
收藏
页码：1637 / 1642
页数：6
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