The effect of boron dopant on hydrogenated graphene for hydrogen storage application

被引:3
|
作者
Susilo, D. N. A. [1 ]
Ganta, M. [1 ]
Sunnardianto, G. K. [1 ,2 ]
Handayani, M. [3 ]
机构
[1] Sampoerna Univ, Fac Engn & Technol, Jl Raya Pasar Minggu,Kav 16, Jakarta, Indonesia
[2] Indonesian Inst Sci LIPI, Res Ctr Chem, Kawasan Puspiptek Serpon 15314, Tangerang Selat, Indonesia
[3] Indonesian Inst Sci LIPI, Res Ctr Met & Mat, Puspiptek Serpong 15314, Tangerang Selat, Indonesia
关键词
D O I
10.1088/1757-899X/541/1/012004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the effect of boron dopant on the charge transfer and reaction pathways of hydrogenated graphene based upon density functional theory calculation. We focused on the particularly the charge transfer rate of trimer hydrogen adsorption and its reaction pathways. Firstly, we investigated the effect of B dopant on the pristine graphene which is revealed that B-C bond length prior to hydrogenation is around 1.49 angstrom resulting the deformed structure of graphene since the size of boron is a bit larger that carbon atom. We have also calculated the charge transfer (CTR) from hydrogen to carbon atom after boron subtitution, we found that there is an increasing the CTR with respect to the pristine graphene indicated that the strong bond length between hydrogen and carbon.
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页数:4
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