Atomistic simulation of ion track formation in UO2

被引:45
|
作者
Pisarev, V. V. [1 ,2 ]
Starikov, S. V. [1 ,2 ]
机构
[1] Russian Acad Sci, Joint Inst High Temp, Moscow 125412, Russia
[2] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia
关键词
uranium dioxide; two-temperature relaxation; radiation track; thermal spike; molecular dynamics; HEAVY-ION; RADIATION-DAMAGE; URANIUM-DIOXIDE; IRRADIATION; DEFECTS; SIO2;
D O I
10.1088/0953-8984/26/47/475401
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The atomistic simulation of track formation due to the moving of swift heavy ion is performed for uranium dioxide. The two-temperature atomistic model with an explicit account of electron pressure and electron thermal conductivity is used. This two-temperature model describes a ionic subsystem by means of molecular dynamics while the electron subsystem is considered in the continuum approach. The various mechanisms of track formation are examined. It is shown that the mechanism of surface track formation differs from the mechanism of track formation in the bulk. The threshold values of the stopping power for track formation are estimated.
引用
收藏
页数:6
相关论文
共 50 条
  • [1] Atomistic simulation of a superionic transition in UO2
    M. A. Korneva
    S. V. Starikov
    Physics of the Solid State, 2016, 58 : 177 - 182
  • [2] Atomistic simulation of a superionic transition in UO2
    Korneva, M. A.
    Starikov, S. V.
    PHYSICS OF THE SOLID STATE, 2016, 58 (01) : 177 - 182
  • [3] Atomistic simulation of fracture in UO2 under tensile loading
    Tian, Xiaofeng
    Ge, Liangquan
    Yu, You
    Wang, Yu
    You, Zhenjiang
    Li, Linshan
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 803 : 42 - 50
  • [4] Hydride ion formation in stoichiometric UO2
    Flitcroft, J. M.
    Molinari, M.
    Brincat, N. A.
    Storr, M. T.
    Parker, S. C.
    CHEMICAL COMMUNICATIONS, 2015, 51 (90) : 16209 - 16212
  • [5] Ion implantation of UO2
    Meek, TT
    Haire, MJ
    Tesmer, J
    Wetteland, C
    Hanrahan, R
    47TH INTERNATIONAL SAMPE SYMPOSIUM AND EXHIBITION, VOL 47, BOOKS 1 AND 2: AFFORDABLE MATERIALS TECHNOLOGY-PLATFORM TO GLOBAL VALUE AND PERFORMANCE, 2002, : 1703 - 1710
  • [6] Atomistic modelling of residual stress at UO2 surfaces
    Arayro, Jack
    Treglia, Guy
    Ribeiro, Fabienne
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 28 (01)
  • [7] Simulation on Nb behavior in UO2
    Zhang, Yong-Bin
    Meng, Da-Qiao
    Zhu, Zheng-He
    Hedongli Gongcheng/Nuclear Power Engineering, 2007, 28 (SUPPL.): : 7 - 11
  • [8] Atomistic simulation of track formation in nuclear fuels due to heavy ion irradiation
    Starikov, S.
    Stegailov, V.
    Pisarev, V.
    SNA + MC 2013 - JOINT INTERNATIONAL CONFERENCE ON SUPERCOMPUTING IN NUCLEAR APPLICATIONS + MONTE CARLO, 2014,
  • [9] The defect chemistry of UO2±x from atomistic simulations
    Cooper, M. W. D.
    Murphy, S. T.
    Andersson, D. A.
    JOURNAL OF NUCLEAR MATERIALS, 2018, 504 : 251 - 260
  • [10] An atomistic modeling of the xenon bubble behavior in the UO2 matrix
    Jelea, A.
    Pellenq, R. J. -M.
    Ribeiro, F.
    JOURNAL OF NUCLEAR MATERIALS, 2014, 444 (1-3) : 153 - 160