Effects of low-energy ion beam action on Ge/Si heteroepitaxy from molecular beam

被引：9

作者：

Dvurechenskii, AV ^{[1
]}

Zinovyev, VA ^{[1
]}

Kudryavtsev, VA ^{[1
]}

Smagina, ZV ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia

来源：

JETP LETTERS | 2000年 / 72卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1316815

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The evolution of the surface morphology of a pseudomorphic Ge film on Si upon irradiation with its own low-energy (230 eV) ions during heteroepitaxy from molecular beam has been studied experimentally by reflection high-energy electron diffraction. It has been found that irradiation with a continuous ion beam leads to a decrease in the critical Ge film thickness at which a transition from two-dimensional layer-by-layer to three-dimensional growth takes place. Exposure to pulsed ion irradiation (0.5 s) at instants of time that correspond to a fractional surface coverage more than 0.5 enhances the reflection intensity, which corresponds to a decrease in the roughness of the growth surface. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：131 / 133

页数：3

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