A SELF-CONSISTENT MODEL OF THE STATIC AND SWITCHING BEHAVIOUR OF 4H-SiC DIODES

被引：0

作者：

Salvatore, Bellone ^{[1
]}

Francesco, Della Corte ^{[2
]}

Luigi, Di Benedetto ^{[1
]}

Loredana, Freda Albanese ^{[1
]}

Domenico, Licciardo Gian ^{[1
]}

机构：

[1] Univ Salerno, Dept Informat & Elect Engn DIIIE, Via Ponte Don Melillo 1, I-84084 Fisciano, SA, Italy

[2] Mediterranea Univ Reggio Calabria, Dept Informat Sci Math Elect & Transportat DIMET, Calabria, Italy

来源：

2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2 | 2010年

关键词：

Reverse recovery; 4H-SiC; PIN diode; switching behaviour;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel model which is capable of describing with significant accuracy the temporal-spatial distributions of the minority carriers in 4H-SiC p-i-n diodes is presented. The analytical behaviour of the current, voltage and carrier distributions is compared with numerical simulations and with experimental results.

引用

页码：405 / 408

页数：4

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