In the present study two-phase BiNbO4//PVDF composites with 0-3 connectivity were studied by impedance spectroscopy within the frequency range Delta v = 100Hz-1MHz at room temperature. Polyvinylidene fluoride (PVDF) acted as a matrix whereas bismuth niobate (BiNbO4) powder acted as a dispersed phase. The volume fraction of the ceramic phase was c(V)= 2, 4, 6, 8, 10, 16 and 20vol%. Analysis of the impedance data registered for composites as well as for BiNbO4 ceramics and PVDF polymer was performed on the base of complex dielectric permittivity mathematical formalism. It was found by impedance spectroscopy that concentration of the dispersed phase had an effect on dielectric properties of ceramic-polymer composite. Experimental data of impedance spectroscopy were fitted to the corresponding equivalent circuit using the complex non-linear least squares method. An equivalent electric circuit consisting of a series combination of two parallel combinations of a resistance R and a constant phase element CPE was found to describe well the dynamic dielectric response of the objects under study. Parameters of the equivalent electric circuit were calculated and it was found that two distinct relaxation processes were present in the composite samples. It was also found that volume fraction of the dispersed phase c(V)= 8vol% corresponded to a local minimum of resistance whereas c(V)= 10vol% of the dispersed phase corresponded to a local minimum of capacitance.
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Korea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, Gyeonggi, South Korea
Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South KoreaKorea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, Gyeonggi, South Korea
Choi, Young Jun
Yoo, Myong-Jae
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Korea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, Gyeonggi, South Korea
Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South KoreaKorea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, Gyeonggi, South Korea
Yoo, Myong-Jae
Kang, Hyung-Won
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Korea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, Gyeonggi, South KoreaKorea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, Gyeonggi, South Korea
Kang, Hyung-Won
Lee, Hyeung-Gyu
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Korea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, Gyeonggi, South KoreaKorea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, Gyeonggi, South Korea
Lee, Hyeung-Gyu
Han, Seung Ho
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Korea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, Gyeonggi, South KoreaKorea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, Gyeonggi, South Korea
Han, Seung Ho
Nahm, Sahn
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Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South KoreaKorea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, Gyeonggi, South Korea
机构:
Univ Oulu, EMPART Res Grp Infotech Oulu, Microelect & Mat Phys Lab, FIN-90014 Oulu, Finland
NOF Corp, Elect Mat Dept, Shibuya Ku, Tokyo 1506019, JapanUniv Oulu, EMPART Res Grp Infotech Oulu, Microelect & Mat Phys Lab, FIN-90014 Oulu, Finland
Sonoda, Kensaku
Juuti, Jari
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Univ Oulu, EMPART Res Grp Infotech Oulu, Microelect & Mat Phys Lab, FIN-90014 Oulu, FinlandUniv Oulu, EMPART Res Grp Infotech Oulu, Microelect & Mat Phys Lab, FIN-90014 Oulu, Finland
Juuti, Jari
Moriya, Yasuo
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NOF Corp, Elect Mat Dept, Shibuya Ku, Tokyo 1506019, JapanUniv Oulu, EMPART Res Grp Infotech Oulu, Microelect & Mat Phys Lab, FIN-90014 Oulu, Finland
Moriya, Yasuo
Jantunen, Heli
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Univ Oulu, EMPART Res Grp Infotech Oulu, Microelect & Mat Phys Lab, FIN-90014 Oulu, FinlandUniv Oulu, EMPART Res Grp Infotech Oulu, Microelect & Mat Phys Lab, FIN-90014 Oulu, Finland