Mobility and compensation in GaAs:MOCVD

被引：0

作者：

MendezFernandez, E ^{[1
]}

PenaSierra, R ^{[1
]}

Escobosa, A ^{[1
]}

机构：

[1] INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT INGN ELECT,SECC ELECTRON ESTADO SOLIDO,MEXICO CITY 07000,DF,MEXICO

来源：

SURFACES, VACUUM, AND THEIR APPLICATIONS | 1996年 / 378期

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

引用

页码：254 / 258

页数：5

共 50 条

[1] High mobility GaAs intrinsic epitaxial layer grown by MOCVD
Li, Jian-Jun
Lian, Peng
Deng, Jun
Han, Jun
Guo, Wei-Ling
Shen, Guang-Di
[J]. Bandaoti Guangdian/Semiconductor Optoelectronics, 2002, 23 (06):
[2] ON THE ROLE OF HYDROGEN IN THE MOCVD OF GAAS
ARENS, G
HEINECKE, H
PUTZ, N
LUTH, H
BALK, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 76 (02) : 305 - 310
[3] ZINC DOPING OF MOCVD GAAS
GLEW, RW
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 44 - 47
[4] PLASMA STIMULATED MOCVD OF GAAS
HEINECKE, H
BRAUERS, A
LUTH, H
BALK, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 241 - 249
[5] Erbium doped GaAs by MOCVD
Greenwald, AC
Linden, KJ
Rees, WS
Just, O
Haegel, NM
Donder, S
[J]. RARE EARTH DOPED SEMICONDUCTORS II, 1996, 422 : 63 - 68
[6] NUMERICAL MODELING OF GAAS MOCVD
COLTRIN, ME
KEE, RJ
[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1991, 202 : 66 - COLL
[7] ANALYSIS OF MOCVD OF GAAS ON PATTERNED SUBSTRATES
CORONELL, DG
JENSEN, KF
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 114 (04) : 581 - 592
[8] ON THE REACTION-MECHANISM OF GAAS MOCVD
NISHIZAWA, J
KURABAYASHI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 413 - 417
[9] MOCVD growth of GaAs/AlGaAs superlattices
Xu, Xiangang
Huang, Baibiao
Ren, Hongwen
Liu, Shiwen
Jiang, Minhua
[J]. Rare Metals, 1994, 13 (01) : 13 - 18
[10] ON THE REACTION-MECHANISM OF GAAS MOCVD
NISHIZAWA, J
KURABAYASHI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 525 - 529