Improved Efficiency of 255-280 nm AlGaN-Based Light-Emitting Diodes

被引：250

作者：

Pernot, Cyril ^{[1
]}

Kim, Myunghee ^{[1
]}

Fukahori, Shinya ^{[1
]}

Inazu, Tetsuhiko ^{[1
]}

Fujita, Takehiko ^{[1
]}

Nagasawa, Yosuke ^{[1
]}

Hirano, Akira ^{[1
]}

Ippommatsu, Masamichi ^{[1
]}

Iwaya, Motoaki ^{[2
]}

Kamiyama, Satoshi ^{[2
,3
]}

Akasaki, Isamu ^{[2
]}

Amano, Hiroshi ^{[4
]}

机构：

[1] Meijo Univ, UV Craftory Co Ltd, Tempaku Ku, Nagoya, Aichi 4680073, Japan

[2] Meijo Univ, Fac Sci & Technol, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[3] Nagoya Univ, Akasaki Inst 3F, EL SEED Corp, Chikusa Ku, Nagoya, Aichi 4648601, Japan

[4] Nagoya Univ, Grad Sch Engn, Dept Elect Engn & Comp Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 06期

关键词：

III-V semiconductors - Efficiency - Sapphire - Light emitting diodes;

D O I：

10.1143/APEX.3.061004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication and characterization of AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with the emission wavelength ranging from 255 to 280 nm depending on the Al composition of the active region. The LEDs were flip-chip bonded and achieved external quantum efficiencies of over 3% for all investigated wavelengths. Under cw operation, an output power of more than 1 mW at 10 mA was demonstrated. A moth-eye structure was fabricated on the back side of the sapphire substrate, and on-wafer output power measurement indicated a 1.5-fold improvement of light extraction. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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