Coarsening and slope selection during crystal growth and etching of Ge(001)

被引：0

作者：

Chey, SJ ^{[1
]}

VanNostrand, JE ^{[1
]}

Cahill, DG ^{[1
]}

机构：

[1] UNIV ILLINOIS, DEPT MAT SCI, URBANA, IL 61801 USA

来源：

EVOLUTION OF EPITAXIAL STRUCTURE AND MORPHOLOGY | 1996年 / 399卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：221 / 228

页数：8

共 50 条

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