Performance of capacitively coupled active pixel sensors in 180nm HV-CMOS technology after irradiation to HL-LHC fluences (vol 9, C03020, 2014)

被引：0
|
作者：
Feigl, S. [1 ]
机构：
[1] CERN, Route Meyrin, CH-1211 Geneva 23, Switzerland
来源：
JOURNAL OF INSTRUMENTATION | 2017年 / 12卷
关键词：
D O I：
10.1088/1748-0221/12/03/E03001
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
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页数：1
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  • [1] Performance of capacitively coupled active pixel sensors in 180 nm HV-CMOS technology after irradiation to HL-LHC fluences
    Feigl, S.
    [J]. JOURNAL OF INSTRUMENTATION, 2014, 9
  • [2] Measurements on HV-CMOS active sensors after irradiation to HL-LHC fluences
    Ristic, B.
    [J]. JOURNAL OF INSTRUMENTATION, 2015, 10 : C04007
  • [3] Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology
    Miucci, A.
    Gonella, L.
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    Huegging, F.
    Krueger, H.
    Obermann, T.
    Wermes, N.
    Garcia-Sciveres, M.
    Backhaus, M.
    Capeans, M.
    Feigl, S.
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    Pernegger, H.
    Ristic, B.
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    Pangaud, P.
    Godiot-Basolo, S.
    Fougeron, D.
    Bompard, F.
    Clemens, J. C.
    Liu, J.
    Barbero, M.
    Rozanov, A.
    [J]. JOURNAL OF INSTRUMENTATION, 2014, 9
  • [4] Active pixel sensors in AMS H18/H35 HV-CMOS technology for the ATLAS HL-LHC upgrade
    Ristic, Branislav
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2016, 831 : 88 - 93
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