Manipulation of transport hysteresis on graphene field effect transistors with Ga ion irradiation

被引：10
|
作者：
Wang, Quan [1 ,2 ]
Liu, Shuai [1 ]
Ren, Naifei [1 ]
机构：
[1] Jiangsu Univ, Sch Mech Engn, Zhenjiang 212013, Peoples R China
[2] Chinese Acad Sci, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 13期
基金：
中国国家自然科学基金;
关键词：
INSTABILITIES;
D O I：
10.1063/1.4897005
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the effect of Ga ion irradiation on the controllable hysteretic behavior of graphene field effect transistors fabricated on Si/SO2 substrates. The various densities of defects in graphene were monitored by Raman spectrum. It was found that the Dirac point shifted to the positive gate voltage constantly, while the hysteretic behavior was enhanced first and then weakened, with the dose of ion irradiation increasing. By contrasting the trap charges density induced by dopant and the total density of effective trap charges, it demonstrated that adsorbate doping was not the decisive factor that induced the hysteretic behavior. The tunneling between the defect sites induced by ion irradiation was also an important cause for the hysteresis. (C) 2014 AIP Publishing LLC.
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页数：5
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