Kondo effect in magnetic tunnel junctions with an AlOx tunnel barrier

被引：3
|
作者：
Zheng, Chao [1 ]
Shull, Robert D. [2 ]
Chen, P. J. [2 ]
Pong, Philip W. T. [1 ]
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
[2] NIST, Funct Nanostruct Mat Grp, Gaithersburg, MD 20899 USA
来源：
PHYSICS LETTERS A | 2016年 / 380卷 / 27-28期
关键词：
Kondo effect; Magnetic tunnel junction; Magnetization configuration; Spin-flip scattering;
D O I：
10.1016/j.physleta.2016.05.001
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The influence of the magnetization configuration on the Kondo effect in a magnetic tunnel junction is investigated. In the parallel configuration, an additional resistance contribution (R*) below 40 K exhibits a logarithmic temperature dependence, indicating the presence of the Kondo effect. However, in the anti parallel configuration, the Kondo-effect-associated spin-flip scattering has a nontrivial contribution to the tunneling current, which compensates the reduction of the current directly caused by Kondo scattering, making R* disappear. These results indicate that suppression and restoration of the Kondo effect can be experimentally achieved by altering the magnetization configuration, enhancing our understanding of the role of the Kondo effect in spin-dependent transport. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：2237 / 2241
页数：5
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