Improving the stability and scalability of all-inorganic inverted CsPbI2Br perovskite solar cell

被引:24
|
作者
Duan, Chenghao [1 ]
Wen, Qiaoyun [1 ]
Fan, Yan [2 ]
Li, Jiong [1 ]
Liu, Zidan [1 ]
Yan, Keyou [1 ]
机构
[1] South China Univ Technol, Sch Environm & Energy, State Key Lab Luminescent Mat & Devices, Guangdong Prov Key Lab Solid Wastes Pollut Contro, Guangzhou 510000, Guangdong, Peoples R China
[2] South China Univ Technol, Med Devices Res & Testing Ctr, Guangzhou 510000, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
All-inorganic perovskite; Sn-doped TiO2; Ultrathin nanocrystal; Stability; Scalability; ELECTRON TRANSPORTING LAYER; EFFICIENT; CH3NH3PBI3;
D O I
10.1016/j.jechem.2021.11.026
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
All-inorganic perovskite solar cells (PSCs) have potential to pass the stability international standard of IEC61215:2016 but cannot deliver high performance and stability due to the poor interface contact. In this paper, Sn-doped TiO2 (Ti1-xSnxO2) ultrathin nanoparticles are prepared for electron transport layer (ETL) by solution process. The ultrathin Ti0.9Sn0.1O2 nanocrystals have greatly improved interface contact due to the facile film formation, good conductivity and high work function. The all-inorganic inverted NiOx/CsPbI2Br/Ti0.9Sn0.1O2 p-i-n device shows a power conversion efficiency (PCE) of 14.0%. We tested the heat stability, light stability and light-heat stability. After stored in 85 degrees C for 65 days, the inverted PSCs still retains 98% of initial efficiency. Under continuous standard one-sun illumination for 600 h, there is no efficiency decay, and under continuous illumination at 85 degrees C for 200 h, the device still retains 85% of initial efficiency. The 1.0 cm(2) device of inverted structure shows a PCE of up to 11.2%. The ultrathin Ti1-xSnxO2 is promising to improve the scalability and stability and thus increase the commercial prospect. (C) 2021 Science Press and Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by ELSEVIER B.V. and Science Press. All rights reserved.
引用
收藏
页码:176 / 183
页数:8
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