Effect of sintering temperature on microstructures and microwave dielectric properties of Ba2MgWO6 ceramics

The microwave dielectric properties of Ba2MgWO6 ceramics were investigated with a view to the use of such ceramics in mobile communication. Ba2MgWO6 ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (E > (r) ) of 16.8-18.2 and unloaded quality factor (Q (u) x f) of 7000-118,200 GHz were obtained at sintering temperatures in the range 1450-1650 A degrees C for 2 h. A maximum apparent density of 6.76 g/cm(3) was obtained for Ba2MgWO6 ceramic, sintered at 1650 A degrees C for 2 h. A dielectric constant (E > (r) ) of 18.4, an unloaded quality factor (Q (u) x f) of 118,200 GHz, and a temperature coefficient of resonant frequency (tau (f) ) of -34 ppm/A degrees C were obtained when Ba2MgWO6 ceramics were sintered at 1650 A degrees C for 2 h.