γ-irradiation effect on transparent conducting ZnO:Ga films

被引：3
|
作者：
Aghamalyan, N. R. [1 ]
Hovsepyan, R. K. [1 ]
Gambaryan, I. A. [1 ]
Kafadaryan, E. A. [1 ]
Petrosyan, S. I. [1 ]
Badalyan, G. R. [1 ]
Shirinyan, A. K. [1 ]
机构：
[1] NAS Armenia, Inst Phys Res, Ashtarak, Armenia
来源：
JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES | 2010年 / 45卷 / 01期
关键词：
ZnO:Ga films; gamma-irradiation; optical properties; resistivity; carrier density; RADIATION HARDNESS; OPTICAL-PROPERTIES; RAY RADIATION; THIN-FILMS; PHOTOSENSITIVITY; ZINC;
D O I：
10.3103/S1068337210010068
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Transparent and conducting pure and Ga-doped ZnO films prepared by e-beam evaporation in vacuum were irradiated at room temperature by Co-60 radiation source with the gamma-photon average energy of 1.25 MeV and with different doses up to similar to 600 kGy. The energy band gap E (g), electrical resistivity, carrier density as well as the structure parameters of pure and doped ZnO films versus the impurity content and gamma-doses were determined in order to estimate the radiation-induced degradation effect on ZnO-based films used as transparent electrodes for electro-optical device applications.
引用
收藏
页码：33 / 41
页数：9
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