Weak antilocalization effect in Tellurium-doped Bi2 Se3 topological insulator nanowires

被引：0

作者：

Tian Feng ^{[1
,2
]}

Zhou Yuan-Ming ^{[1
,2
]}

Zhang Xiao-Qiang ^{[3
]}

Wei Lai-Ming ^{[3
]}

Mei Fei ^{[1
,2
]}

Xu Jin-Xia ^{[1
,2
]}

Jiang Yan ^{[1
,2
]}

Wu Lin-Zhang ^{[2
]}

Kang Ting-Ting ^{[4
]}

Yu Guo-Lin ^{[4
]}

机构：

[1] Hubei Univ Technol, Hubei Collaborat Innovat Ctr High Efficiency Util, Wuhan 430068, Hubei, Peoples R China

[2] Hubei Univ Technol, Sch Elect & Elect Engn, Wuhan 430068, Hubei, Peoples R China

[3] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China

[4] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2017年 / 36卷 / 03期

基金：

中国国家自然科学基金;

关键词：

topological insulator; Bi2Se3; nanowires; weak antilocalization; dephasing length; TRANSPORT;

D O I：

10.11972/j.issn.1001-9014.2017.03.004

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Single-crystalline Bi2Se3 and Bi-2 (TexSe1-x)(3) nanowires were synthesized via Au catalytic vapor-liquid solid (VLS) growth method. Electronic properties of the surface states in individual Bi-2 (TexSe1-x)(3), (x = 0.26) nanowire were studied by low-temperature magnetotransport measurement. Weak antilocalization (WAL) effect was found, suggesting strong spin-orbit coupling in our samples. It is indicated that the bulk effect can be suppressed effectively by the Tellurium (Te) doping. By fitting the magnetoconductance curves at magnetic field up to 7 T measured at different temperatures, the extracted dephasing length l(phi) decreases from 389 nm at 1.5 K to 39 nm at 20 K, which can be well described by the power law l phi proportional to T-0.96. It can be reasonably deduced that both the electron-electron scattering and the electron-phonon scattering play important roles in the Te-doped sample.

引用

页码：270 / 275

页数：6

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