Optical investigations of Be doped ZnO films grown by molecular beam epitaxy

被引：12
|
作者：
Chen, Mingming [1 ]
Zhu, Yuan [2 ]
Chen, Anqi [2 ]
Shen, Zhen [2 ]
Tang, Zikang [2 ,3 ]
机构：
[1] Jiangsu Univ, Fac Sci, Zhenjiang 212013, Jiangsu, Peoples R China
[2] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[3] Univ Macau, Inst Appl Phys & Mat Engn, Ave Univ, Taipa, Macau, Peoples R China
来源：
MATERIALS RESEARCH BULLETIN | 2016年 / 78卷
基金：
中国国家自然科学基金;
关键词：
Oxides; Thin films; Semiconductors; Optical properties; Luminescence; ALLOY-FILMS; MODULATION; BEZNO; LUMINESCENCE;
D O I：
10.1016/j.materresbull.2016.02.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this article, the optical properties of ZnO:Be films grown by plasma-assisted molecular beam epitaxy were investigated by the excitation density-dependent and temperature-dependent photoluminescence measurements. The low temperature photoluminescence spectra showed a dominant excitons bound to neutral donors (D degrees X) emission centered at 3.3540 eV and strong donor-acceptor pair (DAP) transitions at 3.3000 eV. In addition, it showed that the intensity ratio of the DAP and D degrees X peaks changed with background electron concentration. Furthermore, a shallow acceptor state with ionization energy of 116 meV was found and attributed to Zn vacancy. The present study further suggests that Be and N codoping ZnO might be suitable for fabricating reliable p-type ZnO materials. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：16 / 19
页数：4
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