Microstructure evolution of amorphous Si1-xGex thin films

被引：1
|
作者：
Tong, HY [1 ]
Jiang, Q [1 ]
Hsu, D [1 ]
King, TJ [1 ]
Shi, FG [1 ]
机构：
[1] Univ Calif Irvine, Sch Engn, Irvine, CA 92697 USA
来源：
POLYCRYSTALLINE THIN FILMS - STRUCTURE, TEXTURE, PROPERTIES AND APPLICATIONS III | 1997年 / 472卷
关键词：
D O I：
10.1557/PROC-472-397
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The composition dependence of the nucleation free energy barrier W* in amorphous Si-1. Ge-x(x) thin films is investigated. Within the composition range of x = 0.25 similar to 0.52, the nucleation free energy barrier exhibits a maximum, which is in a good agreement with our theoretical analysis. The results are significant for processing polycrystalline SiGe thin films with desirable microstructures for thin film transistor applications. In addition, the incubation time of crystallization of amorphous Si1-xGex (x=0.5) thin films is investigated as a function of temperature.
引用
收藏
页码：397 / 402
页数：6
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