High quality shadow masks for top contact organic field effect transistors using deep reactive ion etching

In this paper, we demonstrate the fabrication of top-contact silicon shadow masks for organic field effect transistors (OFETs) using plasma deep reactive ion etching (DRIE). Over 50 parallel and interdigitated finger contact masks of 30 mu m thickness have been created on a single silicon wafer, with lengths spanning from 6.5 to 60 mu m and channel widths varying from 1000 to 50 000 mu m. Unlike all other mask fabrication techniques to date, these shadow masks are inexpensive, reusable, have nanoscopically sharp edges and can be made with precise (nanoscale) control over various sizes and shapes. Because a large number of these masks can be made at the same time, they can act as a platform for researchers studying new organic materials and OFET structures. Top contact OFETs have been successfully fabricated using these masks with performances comparable if not superior to those made with standard lithography.