Nonlinear carrier transport within gigahertz-terahertz frequencies in spatially non-uniform InSb

被引:0
|
作者
Kasalynas, I. [1 ]
Subacius, L. [1 ]
Seliuta, D. [1 ]
Valusis, G. [1 ]
机构
[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania
关键词
D O I
10.1088/1742-6596/193/1/012078
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Influence of a dc electric field, microwave and terahertz (up to 1.63 THz) excitation on the carrier transport in moderately compensated n-InSb < Cr > containing graded n/n+ junction is investigated. Hot electron thermo-electromotive force and field dependences of the dc-conductivity were measured within 10-110 K. Peculiarities of electron gas heating and low-temperature electron transport can be attributed to the potential fluctuation effects due to random spatial distribution of impurity density in high-resistivity InSb < Cr > crystal.
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