High-energy electronic excitations in a bulk MoS2 single crystal

被引:9
|
作者
Yue, Binbin [1 ,2 ]
Hong, Fang [1 ,2 ]
Tsuei, Ku-Ding [3 ]
Hiraoka, Nozomu [3 ]
Wu, Yu-Han [3 ]
Silkin, Vyacheslav M. [4 ,5 ,6 ]
Chen, Bin [1 ]
Mao, Ho-kwang [1 ,7 ]
机构
[1] Ctr High Pressure Sci & Technol Adv Res, 1690 Cailun Rd, Shanghai 201203, Peoples R China
[2] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
[3] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan
[4] DIPC, Paseo Manuel Lardizabal 4, San Sebastian 20018, Spain
[5] Univ Basque Country, Dept Fis Mat, Apartado 1072, San Sebastian 20080, Spain
[6] Basque Fdn Sci, Ikerbasque, Bilbao 48011, Spain
[7] Carnegie Inst Sci, Geophys Lab, Washington, DC 20015 USA
关键词
DENSITY-FUNCTIONAL THEORY; HEXAGONAL BORON-NITRIDE; LAYER MOS2; GRAPHENE;
D O I
10.1103/PhysRevB.96.125118
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The collective electronic excitations and their dispersion behavior across both the first and second Brillouin zones in a bulk MoS2 single crystal have been investigated using nonresonant inelastic hard x-ray scattering and time-dependent density-functional theory. The experiment results revealed two main plasmons located around 8.6 and 23 eV. The similar to 8.6 eV plasmon shows clear anisotropic behavior and was only observed in plane due to the two-dimensional geometry. In addition, theoretical calculation indicates that the dispersion behavior of this in-plane plasmon shows weak momentum dependence. The main plasmon near 23 eV demonstrates an isotropic three-dimensional collective electron excitation behavior, which suggests a weak correlation between the electron excitation and layered lattice structure. This behavior is completely different from the anisotropic dispersion behavior found in layered graphite. Our work provides clear experimental and theoretical data on the dynamic electronic behavior of excited high-energy electrons in MoS2, which not only provides guidance on device design but also furthers understanding of electronic behaviors in other similar systems.
引用
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页数:7
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